Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2018-03-11T03:52:44Z | - |
dc.date.available | 2018-03-11T03:52:44Z | - |
dc.date.issued | 2013-10 | - |
dc.identifier.citation | APPLIED SURFACE SCIENCE, 2013, 282, P.844-850 | en_US |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://ac.els-cdn.com/S0169433213011793/1-s2.0-S0169433213011793-main.pdf?_tid=c04441c1-20c3-40fe-8424-79cd8021c07b&acdnat=1520507446_85ddb1ae4e00915dd60b082a52142b53 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/44921 | - |
dc.description.abstract | A colloidal silica-abrasive-based slurry mixed with periodate salts has been used for chemical mechanical planarization (CMP) of ruthenium (Ru) film in semiconductor-chip fabrication. This slurry has serious environmental problems such as generation of toxic RuO4 gas, corrosion, and ionic contamination. We developed an environmentally clean slurry using nano-TiO2 abrasive mixed with hydrogen peroxide (H2O2) for the purpose of Ru-film CMP. Moreover, this slurry is free of corrosion and ionic contamination. The polishing rates of Ru and SiO2 films with this slurry strongly depended on the H2O2 concentration; the Ru-film polishing rate rapidly increased with H2O2 concentration up to 1 wt% and then slightly decreased or saturated, whereas the SiO2-film polishing rate abruptly dropped to similar to 50 angstrom/min. In particular, the adsorbed amount of H2O2 on nano-TiO2 abrasive directly determined the Ru-film polishing rate, indicating a new CMP mechanism of Ru film in the slurry. (C) 2013 Published by Elsevier B.V. | en_US |
dc.description.sponsorship | This investigation was financially supported by the Semiconductor Industry Collaborative Project of Hanyang University and Samsung Electronics Co. Ltd., Project (10043398) of Korean Ministry of Knowledge and Economy. We thank Sumco Corp. for helping us with the experiments. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS | en_US |
dc.subject | Chemical mechanical polishing | en_US |
dc.subject | Ruthenium | en_US |
dc.subject | TiO2 | en_US |
dc.subject | H2O2 | en_US |
dc.subject | SHALLOW TRENCH ISOLATION | en_US |
dc.subject | CERIC AMMONIUM-NITRATE | en_US |
dc.subject | DIFFUSION BARRIER | en_US |
dc.subject | HYDROGEN-PEROXIDE | en_US |
dc.subject | SODIUM PERIODATE | en_US |
dc.subject | THIN-FILMS | en_US |
dc.subject | REMOVAL | en_US |
dc.subject | CMP | en_US |
dc.subject | PARTICLES | en_US |
dc.subject | BEHAVIOR | en_US |
dc.title | Environmentally clean slurry using nano-TiO2-abrasive mixed with oxidizer H2O2 for ruthenium-film chemical mechanical planarization | en_US |
dc.type | Article | en_US |
dc.relation.volume | 282 | - |
dc.identifier.doi | 10.1016/j.apsusc.2013.06.068 | - |
dc.relation.page | 844-850 | - |
dc.relation.journal | APPLIED SURFACE SCIENCE | - |
dc.contributor.googleauthor | Cui, Hao | - |
dc.contributor.googleauthor | Park, Jin-Hyung | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2013008982 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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