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Environmentally clean slurry using nano-TiO2-abrasive mixed with oxidizer H2O2 for ruthenium-film chemical mechanical planarization

Title
Environmentally clean slurry using nano-TiO2-abrasive mixed with oxidizer H2O2 for ruthenium-film chemical mechanical planarization
Author
박재근
Keywords
Chemical mechanical polishing; Ruthenium; TiO2; H2O2; SHALLOW TRENCH ISOLATION; CERIC AMMONIUM-NITRATE; DIFFUSION BARRIER; HYDROGEN-PEROXIDE; SODIUM PERIODATE; THIN-FILMS; REMOVAL; CMP; PARTICLES; BEHAVIOR
Issue Date
2013-10
Publisher
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Citation
APPLIED SURFACE SCIENCE, 2013, 282, P.844-850
Abstract
A colloidal silica-abrasive-based slurry mixed with periodate salts has been used for chemical mechanical planarization (CMP) of ruthenium (Ru) film in semiconductor-chip fabrication. This slurry has serious environmental problems such as generation of toxic RuO4 gas, corrosion, and ionic contamination. We developed an environmentally clean slurry using nano-TiO2 abrasive mixed with hydrogen peroxide (H2O2) for the purpose of Ru-film CMP. Moreover, this slurry is free of corrosion and ionic contamination. The polishing rates of Ru and SiO2 films with this slurry strongly depended on the H2O2 concentration; the Ru-film polishing rate rapidly increased with H2O2 concentration up to 1 wt% and then slightly decreased or saturated, whereas the SiO2-film polishing rate abruptly dropped to similar to 50 angstrom/min. In particular, the adsorbed amount of H2O2 on nano-TiO2 abrasive directly determined the Ru-film polishing rate, indicating a new CMP mechanism of Ru film in the slurry. (C) 2013 Published by Elsevier B.V.
URI
https://ac.els-cdn.com/S0169433213011793/1-s2.0-S0169433213011793-main.pdf?_tid=c04441c1-20c3-40fe-8424-79cd8021c07b&acdnat=1520507446_85ddb1ae4e00915dd60b082a52142b53http://hdl.handle.net/20.500.11754/44921
ISSN
0169-4332
DOI
10.1016/j.apsusc.2013.06.068
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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