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Characterization of TMAH based cleaning solution for post Cu-CMP application

Title
Characterization of TMAH based cleaning solution for post Cu-CMP application
Author
박진구
Keywords
Post Cu-CMP; BTA removal; TMAH; Alkaline cleaning solution
Issue Date
2013-02
Publisher
Elsevier Science B.V., Amsterdam.
Citation
Microelectronic engineering, Feb 2013, 102, P.74-80
Abstract
The cleaning of copper surface after chemical mechanical planarization (CMP) process is a critical step since the surface would be contaminated by a large number of slurry particles such as silica or alumina and organic residues such as benzo triazole (BTA). The presence of organic residues results in a hydrophobic surface, which leads to problems in particle removal and drying. A major function of a post copper CMP cleaning solution is to remove these organic contaminants without significant increase in the surface roughness. Alkaline or acidic cleaning solutions are usually preferred over neutral solutions since they can remove organic residues better. The objective of this work is to formulate an alkaline cleaning solution and characterize its efficiency on particle and BTA removal. The cleaning solution studied consists of tetra methyl ammonium hydroxide (TMAH) as the cleaning agent and arginine as the chelating agent. The removal of BTA is characterized using contact angle measurements and electrochemical techniques. The proposed cleaning solution showed good ability in removing BTA and silica particles from the copper surface and also yielded a lower surface roughness. Arginine facilitates complexing of Cu ions thereby preventing redeposition. (C) 2012 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/abs/pii/S0167931712001414http://hdl.handle.net/20.500.11754/44809
ISSN
0167-9317
DOI
10.1016/j.mee.2012.04.006
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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