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dc.contributor.author신동수-
dc.date.accessioned2018-03-10T05:13:57Z-
dc.date.available2018-03-10T05:13:57Z-
dc.date.issued2013-05-
dc.identifier.citationJournal of the Korean Physical Society, 2013, 62(9), P.1291-1294en_US
dc.identifier.issn0374-4884-
dc.identifier.urihttps://link.springer.com/article/10.3938%2Fjkps.62.1291-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/44716-
dc.description.abstractWe investigate the effect of a strain relaxation layer (SRL) on the internal-field measurement of InGaN/GaN multiple quantum wells (MQWs) in blue light-emitting diodes by using electroreflectance (ER) spectroscopy. The polarization charges of the SRL are relatively smaller than those of the MQWs because the SRL has a lower indium composition in the InGaN/GaN superlattice. Therefore, the phases of the ER signals from the MQWs and the SRL are reversed at different bias voltages. From two different compensation voltages, the piezoelectric fields in MQWs and the SRL are estimated separately. When the SRL is not considered, the piezoelectric field in the MQWs can be underestimated.en_US
dc.description.sponsorshipThis work was supported by the Industrial Strategic Technology Development program, 10041878, Development of WPE 75% LED Device Process and Standard Evaluation Technology, funded by the Ministry of Knowledge Economy (MKE, Korea).en_US
dc.language.isoenen_US
dc.publisherKorean Physical SOCen_US
dc.subjectPiezoelectric fielden_US
dc.subjectStrainen_US
dc.subjectLight-emitting diodeen_US
dc.subjectElectroreflectance spectroscopyen_US
dc.titleDetermination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopyen_US
dc.title.alternativeGaN multiple-quantum-well structure by using electroreflectance spectroscopyen_US
dc.typeArticleen_US
dc.relation.volume62-
dc.identifier.doi10.3938/jkps.62.1291-
dc.relation.page1291-1294-
dc.relation.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.googleauthorPark, Su-Ik-
dc.contributor.googleauthorJang, Dong-Hyun-
dc.contributor.googleauthorShim, Jong-In-
dc.contributor.googleauthorShin, Dong-Soo-
dc.relation.code2013011054-
dc.sector.campusS-
dc.sector.daehakGRADUATE SCHOOL[S]-
dc.sector.departmentDEPARTMENT OF BIONANOTECHNOLOGY-
dc.identifier.piddshin-
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GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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