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Effect of the ZnS shell layer on the charge storage capabilities of organic bistable memory devices fabricated utilizing CuInS2-ZnS core-shell quantum dots embedded in a poly(methylmethacrylate) layer

Title
Effect of the ZnS shell layer on the charge storage capabilities of organic bistable memory devices fabricated utilizing CuInS2-ZnS core-shell quantum dots embedded in a poly(methylmethacrylate) layer
Author
김태환
Keywords
Organic bistable memory devices; CuInS2 quantum dot; PMMA; CuInS2-ZnS core-shell quantum dot; FILMS
Issue Date
2013-10
Publisher
ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
Citation
Thin Solid Films, 2013, 544, P.433-436
Abstract
The electrical characteristics of organic bistable memory devices (OBDs) fabricated utilizing CuInS2 (CIS) core or CIS-ZnS core-shell quantum dots (QDs) embedded in a poly(methylmethacrylate) (PMMA) layer on indium-tin-oxide (ITO) coated glass substrates were investigated. X-ray photoelectron spectroscopy spectra demonstrated that the stoichiometries of the QDs embedded in a PMMA layer were CIS or CIS-ZnS QDs. Current-voltage measurements on Al/CIS or CIS-ZnS QDs embedded in PMMA layer/ITO glass devices at 300 K showed current bistabilities. The maximum ON/OFF current ratios of the OBDs with CIS or CIS-ZnS QDs were approximately 1 x 10(3) and 1 x 10(5), respectively. The retention number of ON and OFF states was measured by 1 x 10(5). The memory mechanisms of the OBDs with CIS or CIS-ZnS QDs are described on the basis of the experimental results. (C) 2013 Elsevier B. V. All rights reserved.
URI
https://ac.els-cdn.com/S0040609013003568/1-s2.0-S0040609013003568-main.pdf?_tid=c3a89a13-2856-4f56-bde5-2f8a958549a7&acdnat=1520510591_248bf90da9e2cba967d6a20d2224befdhttp://hdl.handle.net/20.500.11754/44668
ISSN
0040-6090
DOI
10.1016/j.tsf.2013.02.086
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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