Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2018-03-10T04:21:31Z | - |
dc.date.available | 2018-03-10T04:21:31Z | - |
dc.date.issued | 2013-09 | - |
dc.identifier.citation | Thin solid films, 2013, 543, p.106 - 109 | en_US |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0040609013003817?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/44651 | - |
dc.description.abstract | A resistive switching memory device with SnO2 nanoparticles embedded in a biphenyl-tertracarboxylic dianhydride-phenylene diamine polyimide layer on single layered graphene (SLG) was demonstrated, and its electrical properties were characterized. Current levels in the resistance switching memory device were controlled by applying pulse voltages of ± 10 V for 100 ms. The current values of high and low resistance states (HRS and LRS) at 1 V were measured to be about 4.60 × 10? 4 A and 3.04 × 10? 3 A, respectively. The ratio of the HRS and LRS after applying a pulse bias of ± 10 V appeared to be about 7.9 at 1 V, and this result was retained after 104 s. The resistance switching may originate from carrier charging and recombination effects into the SnO2 nanoparticles through modulation of the Fermi level of the SLG due to the applied bias. | en_US |
dc.description.sponsorship | This work was supported by the Basic Science Research Program and Mid-career Researcher Program through the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (Nos. 2012-007035 and 2012-005053). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.subject | SnO2 | en_US |
dc.subject | Resistance switching | en_US |
dc.subject | Nonvolatile memory | en_US |
dc.subject | Polyimide | en_US |
dc.subject | Graphene | en_US |
dc.title | Electrical characteristics of resistive switching memory with metal oxide nanoparticles on a graphene layer | en_US |
dc.type | Article | en_US |
dc.relation.volume | 543 | - |
dc.identifier.doi | 10.1016/j.tsf.2013.02.111 | - |
dc.relation.page | 106-109 | - |
dc.relation.journal | THIN SOLID FILMS | - |
dc.contributor.googleauthor | Lee, Dong Uk | - |
dc.contributor.googleauthor | Kim, Dongwook | - |
dc.contributor.googleauthor | Kim, Eun Kyu | - |
dc.contributor.googleauthor | Cho, Won-Ju | - |
dc.contributor.googleauthor | Kim, Young-Ho | - |
dc.contributor.googleauthor | Im, Hyunsik | - |
dc.relation.code | 2013012183 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
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