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dc.contributor.author박진섭-
dc.date.accessioned2018-03-10T02:02:58Z-
dc.date.available2018-03-10T02:02:58Z-
dc.date.issued2013-10-
dc.identifier.citationThin Solid Films, 2013, 546, P.118-123en_US
dc.identifier.issn0040-6090-
dc.identifier.urihttps://ac.els-cdn.com/S0040609013005026/1-s2.0-S0040609013005026-main.pdf?_tid=d9797d1e-19ab-4ccf-8137-b3a2c8d6d403&acdnat=1520340269_80ac2f01a0eb05eaea348d00dc5d722a-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/44571-
dc.description.abstractIn this study, a nano-columnar low-temperature (LT) GaN buffer was used to reduce the wafer bowing of a GaN layer grown on a sapphire substrate. A significant reduction in the extent of wafer bowing was observed for the GaN layer for the preserved nano-columnar LT GaN layer when compared with the conventional GaN layer. These results suggest that the preserved nano-columnar structure helped relax the GaN layer strain energy associated with thermal expansion mismatch. The flow of TMGa during the temperature ramp-up from LT to high-temperature was found to be an important process parameter to preserving the nano-columnar structure of LT GaN, resulting in less bowed GaN on sapphire. (C) 2013 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThis work was supported by the Ministry of Education, Science and Technology of Korea through the BK21 Program and the Ministry of Knowledge Economy of Korea through the Technology Innovation Program (Industrial Strategic technology development program, 10035430, Development of high efficiency light emitting diode for illumination). This research was supported by WCU (World Class University) project through National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (R31-2008-000-10075-0).en_US
dc.language.isoenen_US
dc.publisherElsevier Science B.V., Amsterdam.en_US
dc.subjectMOCVDen_US
dc.subjectGaNen_US
dc.subjectStressen_US
dc.subjectWafer bowingen_US
dc.subjectNano-columnsen_US
dc.subjectLT GaN bufferen_US
dc.subjectLIGHT-EMITTING-DIODESen_US
dc.subjectC-PLANE SAPPHIREen_US
dc.subjectSTRAINen_US
dc.subjectSTRESSen_US
dc.subjectEPITAXYen_US
dc.subjectFILMSen_US
dc.subjectTHINen_US
dc.titleGrowth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowingen_US
dc.typeArticleen_US
dc.relation.volume546-
dc.identifier.doi10.1016/j.tsf.2013.03.056-
dc.relation.page118-123-
dc.relation.journalTHIN SOLID FILMS-
dc.contributor.googleauthorShin, In-Su-
dc.contributor.googleauthorLee, Donghyun-
dc.contributor.googleauthorLee, Keon-Hoon-
dc.contributor.googleauthorYou, Hyosang-
dc.contributor.googleauthorMoon, Dae Young-
dc.contributor.googleauthorPark, Jinsub-
dc.contributor.googleauthorNanishi, Yasuishi-
dc.contributor.googleauthorYoon, Euijoon-
dc.relation.code2013012183-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidjinsubpark-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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