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Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing

Title
Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing
Author
박진섭
Keywords
MOCVD; GaN; Stress; Wafer bowing; Nano-columns; LT GaN buffer; LIGHT-EMITTING-DIODES; C-PLANE SAPPHIRE; STRAIN; STRESS; EPITAXY; FILMS; THIN
Issue Date
2013-10
Publisher
Elsevier Science B.V., Amsterdam.
Citation
Thin Solid Films, 2013, 546, P.118-123
Abstract
In this study, a nano-columnar low-temperature (LT) GaN buffer was used to reduce the wafer bowing of a GaN layer grown on a sapphire substrate. A significant reduction in the extent of wafer bowing was observed for the GaN layer for the preserved nano-columnar LT GaN layer when compared with the conventional GaN layer. These results suggest that the preserved nano-columnar structure helped relax the GaN layer strain energy associated with thermal expansion mismatch. The flow of TMGa during the temperature ramp-up from LT to high-temperature was found to be an important process parameter to preserving the nano-columnar structure of LT GaN, resulting in less bowed GaN on sapphire. (C) 2013 Elsevier B.V. All rights reserved.
URI
https://ac.els-cdn.com/S0040609013005026/1-s2.0-S0040609013005026-main.pdf?_tid=d9797d1e-19ab-4ccf-8137-b3a2c8d6d403&acdnat=1520340269_80ac2f01a0eb05eaea348d00dc5d722ahttp://hdl.handle.net/20.500.11754/44571
ISSN
0040-6090
DOI
10.1016/j.tsf.2013.03.056
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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