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Effects of Pt capping layer on perpendicular magnet anisotropy in pseudo-spin valves of Ta/CoFeB/MgO/CoFeB/Pt magnetic-tunneling junctions

Title
Effects of Pt capping layer on perpendicular magnet anisotropy in pseudo-spin valves of Ta/CoFeB/MgO/CoFeB/Pt magnetic-tunneling junctions
Other Titles
CoFeB
Author
박재근
Keywords
Annealing; Electrodes; Tantalum; Anisotropy; Magnetic tunnel junctions
Issue Date
2013-05
Publisher
Amer INST Physics
Citation
Applied Physics Letters, 2013, 102(21), 212409
Abstract
We investigated how the Pt capping layer affected perpendicular magnet anisotropy in magnetic-tunnel-junctions fabricated with a Ta electrode, a lower CoFeB layer, an MgO barrier, an upper CoFeB layer, and a Pt capping electrode, which was estimated by using an anisotropy constant multiplied by the upper CoFeB layer thickness (K-u*t). The maximum K-u*t was found at an annealing temperature of 300 degrees C for an magnetic tunnel junction with an upper CoFeB layer thickness of 0.9 nm, indicating a highly textured MgO (100) barrier of 1.0 nm with none of the remaining Pt inter-diffused in the upper CoFeB layer. (C) 2013 AIP Publishing LLC.
URI
http://aip.scitation.org/doi/pdf/10.1063/1.4808084http://hdl.handle.net/20.500.11754/44561
ISSN
0003-6951
DOI
10.1063/1.4808084
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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