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Synthesis and Transistor Properties of Asymmetric Oligothiophenes: Relationship between Molecular Structure and Device Performance

Title
Synthesis and Transistor Properties of Asymmetric Oligothiophenes: Relationship between Molecular Structure and Device Performance
Author
장재영
Keywords
aggregation; oligothiophenes; semiconductors; thin films; transistors; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; ORGANIC SEMICONDUCTORS; END; MOBILITY; DESIGN; QUATERTHIOPHENES; DERIVATIVES; STABILITY; PRECURSOR
Issue Date
2013-10
Publisher
WILEY-V C H VERLAG GMBH, BOSCHSTRASSE 12, D-69469 WEINHEIM, GERMANY
Citation
CHEMISTRY-A EUROPEAN JOURNAL, 2013, 19(42), P.14052-14060
Abstract
A series of three thiophene-naphthalene-based asymmetric oligomers5-decyl-2,2:5,2:5,2-quaterthiophene (DtT), 5-decyl-5-(naphthalen-2-yl)-2,2:5,2-terthiophene (D3TN), and 5-(4-decylphenyl)-5-(naphthalen-2-yl)-2,2-bithiophene (DP2TN)was synthesized by Suzuki cross-coupling reactions. The long alkyl side chains improved both the solubility of the oligomers in solvents and their tendency to self-assemble. UV/Vis absorption measurements suggested that DtT, D3TN, and DP2TN form H-type aggregates with a face-to-face packing structure. In addition, the three oligomers were found to adopt vertically aligned crystalline structures in films deposited on substrates, as revealed by grazing-incidence wide-angle X-ray scattering. These oligomers were used as the active layers of p-type organic field-effect transistors, and the resulting devices showed field-effect mobilities of 3.3x10(-3)cm(2)V(-1)s(-1) for DtT, 1.6x10(-2)cm(2)V(-1)s(-1) for D3TN, and 3.7x10(-2)cm(2)V(-1)s(-1) for DP2TN. The differences in transistor performances were attributed to the degree of overlap and the morphological differences determined by the molecular structures.
URI
http://onlinelibrary.wiley.com/doi/10.1002/chem.201302588/fullhttp://hdl.handle.net/20.500.11754/44542
ISSN
0947-6539; 1521-3765
DOI
10.1002/chem.201302588
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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