Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신동수 | - |
dc.date.accessioned | 2018-03-09T08:10:29Z | - |
dc.date.available | 2018-03-09T08:10:29Z | - |
dc.date.issued | 2013-05 | - |
dc.identifier.citation | Japanese Journal of Applied Physics, 2013, 52(8) | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.7567/JJAP.52.08JL11/meta | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/44457 | - |
dc.description.abstract | We investigate the impacts of quantum-well (QW) shapes on the performance of InGaN/GaN light-emitting diodes (LEDs) grown on c-plane sapphire substrates. Three different QW shapes are utilized, namely, rectangular, staircase, and trapezoidal QWs of thicknesses of 4, 5, and 6 nm. Various optoelectronic measurements are conducted on these samples to determine the correlation of the effect of piezoelectric field with device performances. It is found that the staircase QW consistently shows the reduced effect of piezoelectric field, which agrees well with the simulation results of the increased electron-hole overlap integral over the conventional rectangular QW. The nonconventional QW can reduce the effect of piezoelectric field and improve the LED performance accordingly. (C) 2013 The Japan Society of Applied Physics | en_US |
dc.description.sponsorship | This work was supported in part by LG Innotek and by the Industrial Strategic Technology Development Program (10041878) funded by the Ministry of Knowledge Economy (MKE), Republic of Korea. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | PIEZOELECTRIC FIELD | en_US |
dc.subject | POLARIZATION | en_US |
dc.subject | EMISSION | en_US |
dc.subject | ELECTROREFLECTANCE | en_US |
dc.title | Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes | en_US |
dc.title.alternative | GaN Light-Emitting Diodes | en_US |
dc.type | Article | en_US |
dc.relation.volume | 52 | - |
dc.identifier.doi | 10.7567/JJAP.52.08JL11 | - |
dc.relation.page | 1-4 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Shin, Dong-Soo | - |
dc.contributor.googleauthor | Han, Dong-Pyo | - |
dc.contributor.googleauthor | Shim, Jong-In | - |
dc.contributor.googleauthor | Han, Dae-Seob | - |
dc.contributor.googleauthor | Moon, Yong-Tae | - |
dc.contributor.googleauthor | Park, Joong Seo | - |
dc.relation.code | 2013010434 | - |
dc.sector.campus | S | - |
dc.sector.daehak | GRADUATE SCHOOL[S] | - |
dc.sector.department | DEPARTMENT OF BIONANOTECHNOLOGY | - |
dc.identifier.pid | dshin | - |
dc.identifier.orcid | http://orcid.org/0000-0002-0863-9138 | - |
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