Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes

Title
Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes
Other Titles
GaN Light-Emitting Diodes
Author
신동수
Keywords
PIEZOELECTRIC FIELD; POLARIZATION; EMISSION; ELECTROREFLECTANCE
Issue Date
2013-05
Publisher
IOP PUBLISHING LTD
Citation
Japanese Journal of Applied Physics, 2013, 52(8)
Abstract
We investigate the impacts of quantum-well (QW) shapes on the performance of InGaN/GaN light-emitting diodes (LEDs) grown on c-plane sapphire substrates. Three different QW shapes are utilized, namely, rectangular, staircase, and trapezoidal QWs of thicknesses of 4, 5, and 6 nm. Various optoelectronic measurements are conducted on these samples to determine the correlation of the effect of piezoelectric field with device performances. It is found that the staircase QW consistently shows the reduced effect of piezoelectric field, which agrees well with the simulation results of the increased electron-hole overlap integral over the conventional rectangular QW. The nonconventional QW can reduce the effect of piezoelectric field and improve the LED performance accordingly. (C) 2013 The Japan Society of Applied Physics
URI
http://iopscience.iop.org/article/10.7567/JJAP.52.08JL11/metahttp://hdl.handle.net/20.500.11754/44457
ISSN
0021-4922
DOI
10.7567/JJAP.52.08JL11
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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