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Direct Synthesis of Graphene Meshes and Semipermanent Electrical Doping

Title
Direct Synthesis of Graphene Meshes and Semipermanent Electrical Doping
Author
박원일
Keywords
CHEMICAL-VAPOR-DEPOSITION; GRAPHITE; EXFOLIATION; FILMS; NANOSTRUCTURES; NANORIBBONS; FABRICATION; AREA
Issue Date
2013-07
Publisher
AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Citation
JOURNAL OF PHYSICAL CHEMISTRY LETTERS 권: 4 호: 13 페이지: 2099-2104
Abstract
Here we describe a new method for the direct patterned synthesis of graphene meshes on Cu foils that use self-assembled silica sphere arrays as growth masks. Structural analyses based on electron microscopy and Raman spectroscopy showed that the graphene meshes are mostly single- or double-layer necks with empty holes that have abrupt edges. On the basis of experimental observations, we proposed the model illustrating the dissociation of carbon atoms at the Cu/silica interface through catalytic hydrogenation of the graphene lattice. Moreover, our approach can minimize problems associated with the graphene etching process, including contamination and exposure to reactive plasma. This enables stable electronic doping through covalent C-N bonds at the edges of graphene meshes.
Description
Ministry of Education, Science and Technology (MEST)
URI
http://dx.doi.org/10.1021/jz400940dhttp://hdl.handle.net/20.500.11754/44434
ISSN
1948-7185
DOI
10.1021/jz400940d
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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