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Enhanced Light Extraction Efficiency of GaN-Based LED with ZnO Nanorod Grown on Ga-Doped ZnO Seed Layer

Title
Enhanced Light Extraction Efficiency of GaN-Based LED with ZnO Nanorod Grown on Ga-Doped ZnO Seed Layer
Author
Kwan-San Hui
Keywords
THIN-FILMS; NANOWIRES
Issue Date
2013-07
Publisher
ELECTROCHEMICAL SOC INC, 65 SOUTH MAIN STREET, PENNINGTON, NJ 08534 USA
Citation
ECS SOLID STATE LETTERS, 2013, 2(6), P.Q43-Q46
Abstract
High density and narrow zinc oxide nanorod (ZnO NR) arrays (aspect ratio similar to 18.9) were hydrothermally grown on gallium-doped ZnO (GZO) seed layer (3 wt% Ga-doping). Light-emitting diode (LED) fabricated with ZnO NR arrays grown on GZO seed showed marked 19% and 70% increases in light output power at 20 mA of driving current compared to that of LED with ZnO NR arrays grown on ZnO seed layer and reference LED. The significant enhancement of light output power is attributed to high density and surface-to-volume ratios of NR arrays as well as to enhanced multiple photons scattering at the NR surface. (C) 2013 The Electrochemical Society. [DOI: 10.1149/2.005306ssl] All rights reserved.
Description
Ministry of Education, Science and Technology
URI
http://ssl.ecsdl.org/content/2/6/Q43
ISSN
2162-8742
DOI
10.1149/2.005306ssl
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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