47 0

Reduction of RuO2 Film to Metallic Ru Film Using Atomic Layer Deposition under Different Oxygen Partial Pressure

Title
Reduction of RuO2 Film to Metallic Ru Film Using Atomic Layer Deposition under Different Oxygen Partial Pressure
Author
전형탁
Keywords
RUTHENIUM; SURFACES; TECHNOLOGY; ELECTRODE; GROWTH; MEMORY; SIO2
Issue Date
2013-03
Publisher
IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, 권: 52, 호: 5, 4p.
Abstract
Thin ruthenium oxide film deposition on 100 nm SiO2 substrate by thermal atomic layer deposition (ALD) prior to ruthenium deposition. RuO2 was totally reduced to metallic Ru film when Ru deposition process with low oxygen partial pressure. Using this technique, we can improve overall deposition speed by reducing incubation time which is major problem of deposition Ru film. In addition, we compare properties of Ru film deposited by thermal ALD directly deposited on SiO2 substrate and Ru film obtained from reduction of RuO2 film. The Ru film from RuO2 has smoother surface RMS roughness than Ru film directly deposited on SiO2 substrate. (c) 2013 The Japan Society of Applied Physics
URI
http://iopscience.iop.org/article/10.7567/JJAP.52.05FB05/metahttp://hdl.handle.net/20.500.11754/44259
ISSN
0021-4922
DOI
10.7567/JJAP.52.05FB05
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE