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dc.contributor.author정두석-
dc.date.accessioned2018-03-09T05:34:12Z-
dc.date.available2018-03-09T05:34:12Z-
dc.date.issued2013-07-
dc.identifier.citationECS Solid State Letters,2013,2(10),p Q75-Q77en_US
dc.identifier.issn2162-8742-
dc.identifier.urihttp://ssl.ecsdl.org/content/2/10/Q75-
dc.description.abstractWe studied GexSe1-x for the potential application in the Ovonic Threshold Switching (OTS) device. We found that, as Ge concentration increased, the thermal stability was deteriorated while the device performances were improved. In addition, using Spectroscopic Ellipsometry (SE) technique, the energy gap (E-g) and the Urbach energy (E-U) were found to show non- monotonic dependences, with their minimum of about 1.0 eV of E-g for Ge0.6Se0.4 and 40 meV of E-U for Ge0.5Se0.5. These changes are consistent with the changes in device characteristics, which might be explained in terms of the change in the number of Se-Se bondings. (c) 2013 The Electrochemical Society. All rights reserved.en_US
dc.description.sponsorshipThis research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials (grant no. 2M31560) funded by the Ministry of Knowledge Economy Republic of Korea.en_US
dc.language.isoenen_US
dc.publisherELECTROCHEMICAL SOC INC, 65 SOUTH MAIN STREET, PENNINGTON, NJ 08534 USAen_US
dc.subjectALLOYSen_US
dc.subjectGlassen_US
dc.subjectElectronicen_US
dc.subjectStructuresen_US
dc.subjectCharacteristicsen_US
dc.subjectOvonicen_US
dc.titleEffect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.001310ssl-
dc.relation.journalECS SOLID STATE LETTERS-
dc.contributor.googleauthorKim, S.-D.-
dc.contributor.googleauthorAhn, H.-W.-
dc.contributor.googleauthorShin, S.-Y.-
dc.contributor.googleauthorJeong, D.-S.-
dc.contributor.googleauthorSon, S.-H.-
dc.contributor.googleauthorCheong, B.-K.-
dc.contributor.googleauthorLee, S.-
dc.contributor.googleauthorShin, D.-W.-
dc.contributor.googleauthorLee, H.-
dc.relation.code2013054687-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.piddooseokj-
dc.identifier.researcherID56471112000-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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