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Dependence of nickel gettering on crystalline nature in as-grown Czochralski silicon wafer

Title
Dependence of nickel gettering on crystalline nature in as-grown Czochralski silicon wafer
Author
백운규
Keywords
Defects; Impurities; Point defects; Czochralski method; Single crystal growth; Semiconducting silicon
Issue Date
2013-02
Publisher
Elsevier Science B.V., Amsterdam.
Citation
Journal Of Crystal Growth, Feb 2013, 365, P.6-10
Abstract
The efficiency of nickel gettering in vacancy- and interstitial-silicon-dominant crystalline nature was studied using wafers cut along the axial direction of a CZ-grown silicon ingot grown with a variable v/G ratio. Six crystalline areas (V-rich, P-band, P-v, P-I, B-band, and l-rich) were present within one wafer. Nickel gettering efficiency was estimated before and after a typical NAND-flash-memory heat-treatment. With as-grown CZ silicon wafers, nickel gettering depends on the crystalline nature, i.e., nickel atoms are mainly gathered at oxygen precipitates in bulk at vacancy-dominant crystalline regions and at the surface of pure silicon in the interstitial-silicon-dominant crystal region (P-I). Rapid thermal annealing of a CZ silicon wafer at 1175 degrees C for 10 s in Ar/NH3 mixture ambient completely erased the dependency of nickel gettering on the crystalline nature and demonstrated an excellent getting ability for nickel contamination via the relaxation gettering of oxygen precipitates. (C)) 2012 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0022024812009177?via%3Dihubhttp://hdl.handle.net/20.500.11754/44156
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2012.12.033
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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