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Electrical characteristics of resistive switching memory with metal oxide nanoparticles on a graphene layer

Title
Electrical characteristics of resistive switching memory with metal oxide nanoparticles on a graphene layer
Author
김영호
Keywords
SnO2; Resistance switching; Nonvolatile memory; Polyimide; Graphene
Issue Date
2013-03
Publisher
ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
Citation
THIN SOLID FILMS, 권: 543, 페이지: 106-109
Abstract
A resistive switching memory device with SnO2 nanoparticles embedded in a biphenyl-tertracarboxylic dianhydride-phenylene diamine polyimide layer on single layered graphene (SLG) was demonstrated, and its electrical properties were characterized. Current levels in the resistance switching memory device were controlled by applying pulse voltages of +/- 10 V for 100 ms. The current values of high and low resistance states (HRS and LRS) at 1 V were measured to be about 4.60 x 10(-4) A and 3.04 x 10(-3) A, respectively. The ratio of the HRS and LRS after applying a pulse bias of +/- 10 V appeared to be about 7.9 at 1 V, and this result was retained after 10(4) s. The resistance switching may originate from carrier charging and recombination effects into the SnO2 nanoparticles through modulation of the Fermi level of the SLG due to the applied bias. (C) 2013 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0040609013003817?via%3Dihubhttp://hdl.handle.net/20.500.11754/44152
ISSN
0040-6090
DOI
10.1016/j.tsf.2013.02.111
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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