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Effective multi-step Ge condensation process using intermittent SiO2 strip to obtain a high-Ge concentration and a thick Ge-on-insulator (GeOI) substrate for p-MOSFET

Title
Effective multi-step Ge condensation process using intermittent SiO2 strip to obtain a high-Ge concentration and a thick Ge-on-insulator (GeOI) substrate for p-MOSFET
Author
박재근
Keywords
SOI; Ge; Ge-on-insulator; Gecondensation; Intermittent strip
Issue Date
2013-02
Publisher
Korean Physical SOC
Citation
Journal of the Korean Physical Society, Feb 2013, 62(3), P.531-535
Abstract
The effect of an intermittent SiO2 strip process in multi-step oxidation on the physical properties of a condensed Ge-on-insulator (GeOI) layer was investigated to realize a higher Ge concentration. By utilizing an intermittent SiO2 strip during the condensation process, we demonstrated a 21-nm GeOI layer with a Ge concentration of higher than 95 at% and confirmed that total process time to reach a Ge concentration higher than 95 at% could be reduced by maximum of 77% compared to a conventional process without the SiO2 strip. This was attributed to the intermittent SiO2 strip process causing Ge atoms to be volatized in the O-2 environment during the condensation process. The intermittent SiO2 strip is essential to achieve a Ge concentration higher than 95 at% and is very effective in realizing a high Ge concentration and a thick Ge-on-insulator substrate.
URI
http://link.springer.com/article/10.3938%2Fjkps.62.531http://hdl.handle.net/20.500.11754/44105
ISSN
0374-4884
DOI
10.3938/jkps.62.531
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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