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Nonvolatile Hybrid Memory Cell Embedded with Ni Nanocrystals in Poly(3-hexylthiophene)

Title
Nonvolatile Hybrid Memory Cell Embedded with Ni Nanocrystals in Poly(3-hexylthiophene)
Author
박재근
Keywords
ELECTRICAL BISTABILITY; SYSTEM
Issue Date
2012-11
Publisher
IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, Nov 2012, 51(12), P.4
Abstract
We developed a cross-bar nonvolatile hybrid memory cell embedded with Ni nanocrystals in poly(3-hexylthiophene) (P3HT) with cell area of 4F(2), where F is a feature size. The cell demonstrated nonvolatile memory characteristics, such as a memory margin (I-on/I-off ratio) of similar to 5 x 10, over 103 endurance cycles of program-and-erase, and a retention time of 10(4) s at 85 degrees C. In addition, the mechanism of nonvolatile memory operation for the hybrid memory cell was confirmed by the combination of space-charge-limited current and a Fowler-Nordheim tunneling conduction.
URI
http://iopscience.iop.org/article/10.1143/JJAP.51.120202/metahttp://hdl.handle.net/20.500.11754/42982
ISSN
0021-4922
DOI
10.1143/JJAP.51.120202
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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