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Comparison study of structural and optical properties of boron-doped and undoped graphene oxide films

Title
Comparison study of structural and optical properties of boron-doped and undoped graphene oxide films
Author
심광보
Keywords
Boron; Graphene oxide; Photoluminescence; Doping; WALLED CARBON NANOTUBES; RAMAN-SPECTROSCOPY; GRAPHITE OXIDES; AMORPHOUS-CARBON; LAYER GRAPHENE; THIN-FILMS; SHEETS; PHOTOLUMINESCENCE; TRANSPARENT; MICROWAVE
Issue Date
2012-11
Publisher
ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
Citation
Chemical Engineering Journal, Vol.211-212, No.-[2012], p369-377
Abstract
We prepared boron (B)-doped graphene oxides (G0s) by means of annealing the films, which were obtained from the suspensions of GO and H3BO3 in N,N-Dimethylformamide solvent. The interplanar spacing of as-synthesized GO in X-ray diffraction spectra has been reduced by the thermal annealing at 1100 degrees C. First-order Raman spectra revealed that the intensity ratio of the D and G bands of B-doped GO was significantly lower than those of as-synthesized and annealed GOs, suggesting more graphitization of the B-doped GO due to doping effect. The C1s X-ray photoelectron spectroscopy (XPS) of B-doped GO films not only indicated that considerable amount of functional groups has been removed but also exhibited the peak of C-B band at around 283.7 eV. Additionally, the B1s XPS spectrum of B-doped GOs could be deconvoluted into several peaks centered at 187.2, 188.9, 190.3, 192.0 and 193.7 eV, being attributed to the presence of B atom in B4C, B-sub-C, BC2O, BCO2 and B2O3, respectively. Comparison of the photoluminescence spectra of B-doped GO with that of 1100 degrees C-annealed GO indicated that the overall intensity was decreased, presumably due to the B-induced graphitization. An additional band at around 600-700 nm from B-doped GO is attributed to the generated boron carbide phases. (C) 2012 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S1385894712012727?via%3Dihub
ISSN
1385-8947
DOI
10.1016/j.cej.2012.09.081
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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