Gadolinium nitride films deposited using a PEALD based process

Title
Gadolinium nitride films deposited using a PEALD based process
Author
전형탁
Keywords
Auger electron spectroscopy; Medium energy ion scattering; Atomic layer deposition; Gadolinium compounds; Nitrides; Magnetic materials
Issue Date
2012-12
Publisher
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Citation
JOURNAL OF CRYSTAL GROWTH, 338, 1, 111-117
Abstract
Gadolinium nitride films have been deposited on Si(100) using a plasma-enhanced ALD (PEALD) based process. The deposition was carried out using tris(methylcyclopentadienyl)gadolinium {Gd(MeCp)(3)} and remote nitrogen plasma, separated by argon pulses. Films were deposited at temperatures between 150 and 300 C and capped with tantalum nitride to prevent post-deposition oxidation. Film composition was initially assessed using EDX and selected samples were subsequently depth profiled using medium energy ion scattering (MEIS) or AES. X-ray diffraction appears to show that the films are effectively amorphous. Films deposited at 200 degrees C were found to have a Gd:N ratio close to 1:1 and a low oxygen incorporation (similar to 5%). Although the growth was affected by partial thermal decomposition of the Gd(MeCp)3, it was still possible to obtain smooth (Ra.=similar to 0.7 nm) films with good thickness uniformity (97%). Less successful attempts to deposit gadolinium nitride using thermal ALD with ammonia or mono-methyl-hydrazine are also reported. (C) 2011 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0022024811009067http://hdl.handle.net/20.500.11754/42902
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2011.10.049
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE