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dc.contributor.author전형탁-
dc.date.accessioned2018-03-06T05:09:10Z-
dc.date.available2018-03-06T05:09:10Z-
dc.date.issued2012-12-
dc.identifier.citationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209, 2, 302-305en_US
dc.identifier.issn1862-6300-
dc.identifier.urihttp://onlinelibrary.wiley.com/doi/10.1002/pssa.201127280/full-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/42899-
dc.description.abstractBy using remote plasma atomic layer deposition (ALD), ruthenium thin films were deposited on SiO2 using bis(ethylcy-clopentadienyl) ruthenium [Ru(EtCp)(2)] as a Ru precursor and an ammonia plasma as a reactant. Different plasma treatments were applied, and the best results were obtained with the Ar plasma-treated SiO2 surface. The initial transition region usually observed with Ru deposition before continuous film formation was present, and the number of ALD cycles required to obtain a continuous film was reduced to about 35 cycles on the Ar plasma-treated SiO2 substrates. The transition region of Ru cluster growth on Ar plasma-treated SiO2 was investigated with transmission electron microscopy (TEM). Most of the Ru clusters were larger and better crystallized on the Ar plasma-treated SiO2 than on untreated SiO2. Also, Ru films deposited on the treated SiO2 exhibited a (002) preferred orientated structure with a film resistivity of about 10.26 mu Omega V-cm. The growth rates of Ru after passing the transition region were similar on both the treated and untreated SiO2 at about 1.7 angstrom/cycles. From the Auger electron spectroscopy (AES) spectrum, a very low content of oxygen was observed in the Ru films. About 9% carbon was detected by a rutherford backscattering spectrometer (RBS). (c) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.description.sponsorshipThis research was supported by The National Research Program for Terabit Nonvolatile Memory Development sponsored by the Korean Ministry of Knowledge Economy.en_US
dc.language.isoenen_US
dc.publisherWILEY-V C H VERLAG GMBH, PO BOX 10 11 61, D-69451 WEINHEIM, GERMANYen_US
dc.subjectremote plasma atomic layer depositionen_US
dc.subjectruthenium filmsen_US
dc.titleThe properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2en_US
dc.typeArticleen_US
dc.relation.no2-
dc.relation.volume209-
dc.identifier.doi10.1002/pssa.201127280-
dc.relation.page302-305-
dc.relation.journalPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE-
dc.contributor.googleauthorPark, Taeyong-
dc.contributor.googleauthorChoi, Dongjin-
dc.contributor.googleauthorChoi, Hagyoung-
dc.contributor.googleauthorJeon, Hyeongtag-
dc.relation.code2012214164-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidhjeon-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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