Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2018-03-06T05:09:10Z | - |
dc.date.available | 2018-03-06T05:09:10Z | - |
dc.date.issued | 2012-12 | - |
dc.identifier.citation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209, 2, 302-305 | en_US |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | http://onlinelibrary.wiley.com/doi/10.1002/pssa.201127280/full | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/42899 | - |
dc.description.abstract | By using remote plasma atomic layer deposition (ALD), ruthenium thin films were deposited on SiO2 using bis(ethylcy-clopentadienyl) ruthenium [Ru(EtCp)(2)] as a Ru precursor and an ammonia plasma as a reactant. Different plasma treatments were applied, and the best results were obtained with the Ar plasma-treated SiO2 surface. The initial transition region usually observed with Ru deposition before continuous film formation was present, and the number of ALD cycles required to obtain a continuous film was reduced to about 35 cycles on the Ar plasma-treated SiO2 substrates. The transition region of Ru cluster growth on Ar plasma-treated SiO2 was investigated with transmission electron microscopy (TEM). Most of the Ru clusters were larger and better crystallized on the Ar plasma-treated SiO2 than on untreated SiO2. Also, Ru films deposited on the treated SiO2 exhibited a (002) preferred orientated structure with a film resistivity of about 10.26 mu Omega V-cm. The growth rates of Ru after passing the transition region were similar on both the treated and untreated SiO2 at about 1.7 angstrom/cycles. From the Auger electron spectroscopy (AES) spectrum, a very low content of oxygen was observed in the Ru films. About 9% carbon was detected by a rutherford backscattering spectrometer (RBS). (c) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | en_US |
dc.description.sponsorship | This research was supported by The National Research Program for Terabit Nonvolatile Memory Development sponsored by the Korean Ministry of Knowledge Economy. | en_US |
dc.language.iso | en | en_US |
dc.publisher | WILEY-V C H VERLAG GMBH, PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY | en_US |
dc.subject | remote plasma atomic layer deposition | en_US |
dc.subject | ruthenium films | en_US |
dc.title | The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2 | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 209 | - |
dc.identifier.doi | 10.1002/pssa.201127280 | - |
dc.relation.page | 302-305 | - |
dc.relation.journal | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.contributor.googleauthor | Park, Taeyong | - |
dc.contributor.googleauthor | Choi, Dongjin | - |
dc.contributor.googleauthor | Choi, Hagyoung | - |
dc.contributor.googleauthor | Jeon, Hyeongtag | - |
dc.relation.code | 2012214164 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | hjeon | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.