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Al2O3/TiO2 Multilayer Passivation Layers Grown at Low Temperature for Flexible Organic Devices

Title
Al2O3/TiO2 Multilayer Passivation Layers Grown at Low Temperature for Flexible Organic Devices
Other Titles
TiO2 Multilayer Passivation Layers Grown at Low Temperature for Flexible Organic Devices
Author
박종완
Keywords
Passivation Layer; Atomic Layer Deposition (ALD); Water Vapor Transmission Rate (WVTR); Activation Energy; Packing Density; BARRIER FILMS; THIN-FILMS; DEPOSITION; PERMEATION
Issue Date
2012-04
Publisher
AMER SCIENTIFIC PUBLISHERS, 26650 THE OLD RD, STE 208, VALENCIA, CA 91381-0751 USA
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,VOL12,NO4,P3696-3700
Abstract
In this study, the permeability of passivation layers consisting of aluminum oxide (Al2O3) and titanium oxide (TiO2) was examined. The films were deposited on poly(ether sulfone) (PES) substrates via electron cyclotron resonance atomic layer deposition (ECR-ALD) at various deposition temperatures. The optimum plasma power and deposition temperature were investigated through measurements of the refractive index and packing density of the Al2O3 and TiO2 films. A buffer layer/multilayer structure was proposed in this study to improve the passivation barrier performance. A low water vapor transmission rate (WVTR) of approximately 5 x 10(-3) g/m2 x day was achieved with two Al2O3/TiO2 stacks with thicknesses of 40 nm deposited at 80 degrees C. Based on the Arrhenius rate equation, the activation energy of water vapor transmission through different passivation structures was examined. The activation energies of Al2O3, Al2O3/TiO2, and two Al2O3/TiO2 stacks with thicknesses of 40 nm were 51.8, 63.9, and 74.7 kJ/mol, respectively.
URI
http://www.ingentaconnect.com/content/asp/jnn/2012/00000012/00000004/art00150http://hdl.handle.net/20.500.11754/42636
ISSN
1533-4880
DOI
10.1166/jnn.2012.5663
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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