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Semiconducting behavior of niobium-doped titanium oxide in the amorphous state

Title
Semiconducting behavior of niobium-doped titanium oxide in the amorphous state
Author
박진성
Keywords
Niobium; Annealing; Trans Neptunian objects; Thin film transistors; Semiconductors
Issue Date
2012-04
Publisher
AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Citation
APPLIED PHYSICS LETTERS, 100, 14, 142103
Abstract
Electrical properties of Nb-doped titanium oxide films were evaluated with respect to annealing temperatures. Although an amorphous phase is preserved up to 450 degrees C, x-ray absorption spectroscopy analyses indicate that crystal field splitting in the conduction band begins to take place at this temperature. Such molecular orbital ordering effects induce a semiconducting behavior, which is manifested by working thin film transistor devices with field effect mobility values as high as 0.64 cm(2)/Vs. X-ray photoelectron spectroscopy studies disclose a drastic increase in Nb+5 states upon heat treatment, and these may be attributed to oxygen deficient states that generate free electrons. (C) 2012 American Institute of Physics. [http://dx.doi.org.access.hanyang.ac.kr/10.1063/1.3698389]
URI
http://aip.scitation.org/doi/10.1063/1.3698389http://hdl.handle.net/20.500.11754/42621
ISSN
0003-6951
DOI
10.1063/1.3698389
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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