Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence

Title
Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence
Author
신동수
Keywords
Light emitting diodes; Overflows; Quantum wells; Quantum mechanics; Indium
Issue Date
2012-04
Publisher
AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Citation
APPLIED PHYSICS LETTERS, 100, 15, 153506
Abstract
InGaN-based blue and green light-emitting diodes are studied by temperature-dependent electroluminescence (EL) from 300 to 50K to elucidate the effects of carrier overflow and the saturation in radiative recombination rate on the efficiency droop. Severe efficiency droop at cryogenic temperatures is attributed to the carrier overflow, which is confirmed by the EL spectra. The degree of overflow is thought to be related to the reduced effective active volume and the subsequent saturation in radiative recombination rate. Carrier transport and indium clustering in the active region are discussed in relation to the reduced effective active volume. (C) 2012 American Institute of Physics. [http://dx.doi.org.access.hanyang.ac.kr/10.1063/1.3703313]
URI
http://aip.scitation.org.access.hanyang.ac.kr/doi/full/10.1063/1.3703313http://hdl.handle.net/20.500.11754/42477
ISSN
0003-6951
DOI
10.1063/1.3703313
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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