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Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5-x/TiOxNy framework

Title
Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5-x/TiOxNy framework
Other Titles
Ta2O5-x
Author
박재근
Keywords
RESISTIVE SWITCHING MEMORIES; THIN-FILMS; DEPOSITION; MECHANISM; DEVICES; LAYER
Issue Date
2013-10
Publisher
AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Citation
Applied Physics Letters,2013,103.p183510
Abstract
We describe abnormal dual bipolar resistive switching events in simple Pt/Ta2O5-x/TiOxNy and Pt/Ta2O5-x/TiN matrices in which the typical switching directions (SD) are initially clockwise (CW). The negative difference region in a high resistance state before reaching the typical "CW set" process enables the SD transition to a counterclockwise direction. It thereby emphasizes the occurrence of a highly stable secondary bipolar resistive switching curve. The origin of two different switching modes is described by adapting a bias-dependent oxygen ion accumulation and depletion process at TiOxNy and TiN electrode interfaces and by performing various structural analyses. (C) 2013 AIP Publishing LLC.
Description
Ministry of Trade, Industry and Energy (MI, Korea)
URI
http://dx.doi.org/10.1063/1.4828561http://hdl.handle.net/20.500.11754/42040
ISSN
0003-6951
DOI
10.1063/1.4828561
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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