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dc.contributor.author박재근-
dc.date.accessioned2018-02-28T08:17:58Z-
dc.date.available2018-02-28T08:17:58Z-
dc.date.issued2012-09-
dc.identifier.citationJournal of the Korean Physical Society, Aug 2012, 61(4), P.507-512en_US
dc.identifier.issn0374-4884-
dc.identifier.urihttps://link.springer.com/article/10.3938%2Fjkps.61.507-
dc.description.abstractWe investigated the device characteristics of polymer photovoltaic (PV) cells based on a poly(3-hexylthiophene) (P3HT) and [6,6]-phenylC61 butyric acid methyl ester (PCBM) bulk heterojunction with a cathode buffer layer of thermally evaporated bis (2-methyl-8-quninolinato)-4-phenylphenolate (BAlq). A power conversion efficiency (PCE) of 2.46% was obtained with the insertion of a 4-nm-thick BAlq, which was similar to 118% increase over that for the cell without a BAlq layer, under Air Mass 1.5 Global (AM 1.5 G) illumination, 100 mW/cm(2). Moreover, we examined the charge carrier transport property, and found that the hole mobility of the cell was enhancement due to the insertion of a BAlq layer with a thickness of less than 4 nm, which accounted for the improved in the photocurrent and fill factor (FF) due to the better balance of charge carriers. Finally, the BAlq buffer layer was also demonstrated as an optical spacer that improved the optical absorption of the P3HT:PCBM layer, which accounted for the J (sc) enhancement of the device.en_US
dc.description.sponsorshipThis work was supported by the Brain Korea 21 project in 2012 and by 'the Industrial Strategic Technology Development Program' funded by the Ministry of Knowledge Economy (MKE, Korea).en_US
dc.language.isoenen_US
dc.publisherKorean Physical SOCen_US
dc.subjectOPVen_US
dc.subjectPolymer solar cellen_US
dc.subjectP3HT:PCBMen_US
dc.subjectBAlqen_US
dc.subjectHole & exciton blockingen_US
dc.titleEffect of a thermally evaporated bis (2-methyl-8-quninolinato)-4-phenylphenolate cathode buffer layer on the performance of polymer photovoltaic cellsen_US
dc.typeArticleen_US
dc.relation.no4-
dc.relation.volume61-
dc.identifier.doi10.3938/jkps.61.507-
dc.relation.page507-512-
dc.relation.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.googleauthorKim, Dal-Ho-
dc.contributor.googleauthorPark, Jea-Gun-
dc.contributor.googleauthor김달호-
dc.contributor.googleauthor박재근-
dc.relation.code2012205987-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidparkjgl-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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