Generation of Zn2SiO4 Nanocrystallites in a Shell of ZnO/SiOx Core-Shell Nanowires to Change Photoluminescence Properties
- Title
- Generation of Zn2SiO4 Nanocrystallites in a Shell of ZnO/SiOx Core-Shell Nanowires to Change Photoluminescence Properties
- Other Titles
- SiOx Core-Shell Nanowires to Change Photoluminescence Properties
- Author
- 김현우
- Keywords
- nanostructured materials; sputtering; optical properties; transmission electron microscopy (TEM); annealing; ZNO NANOWIRES; SILICON NANOWIRES; TEMPERATURE; ULTRAVIOLET; EXCITON; FABRICATION; NANOTUBES; NANOSTRUCTURES; ENHANCEMENT; MORPHOLOGY
- Issue Date
- 2012-08
- Publisher
- Hanrimwon Publishing Co.
- Citation
- METALS AND MATERIALS INTERNATIONAL,Vol.18,No.4 [2012],p705-710
- Abstract
- This study addresses the annealing effects of ZnO/SiOx core-shell nanowire optical properties, in terms of Zn2SiO4 crystallite generation. At 700 A degrees C, the integrated PL intensity of deep-level emission was increased by annealing. With regard to UV emission, free exciton (FX) peak intensity was reduced and the ratio of FX to non-FX peak intensities increased as annealing temperature was increased. These annealing induced changes, including the enhancement of deep-level emission and suppression of FX emission, are mainly related to the generation of Zn2SiO4 crystallites. Transmission electron microscopy revealed that Zn2SiO4 crystallites were formed inside the SiOx shell layer.
- URI
- http://link.springer.com/article/10.1007%2Fs12540-012-4021-zhttp://hdl.handle.net/20.500.11754/41296
- ISSN
- 1598-9623
- DOI
- 10.1007/s12540-012-4021-z
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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