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Generation of Zn2SiO4 Nanocrystallites in a Shell of ZnO/SiOx Core-Shell Nanowires to Change Photoluminescence Properties

Title
Generation of Zn2SiO4 Nanocrystallites in a Shell of ZnO/SiOx Core-Shell Nanowires to Change Photoluminescence Properties
Other Titles
SiOx Core-Shell Nanowires to Change Photoluminescence Properties
Author
김현우
Keywords
nanostructured materials; sputtering; optical properties; transmission electron microscopy (TEM); annealing; ZNO NANOWIRES; SILICON NANOWIRES; TEMPERATURE; ULTRAVIOLET; EXCITON; FABRICATION; NANOTUBES; NANOSTRUCTURES; ENHANCEMENT; MORPHOLOGY
Issue Date
2012-08
Publisher
Hanrimwon Publishing Co.
Citation
METALS AND MATERIALS INTERNATIONAL,Vol.18,No.4 [2012],p705-710
Abstract
This study addresses the annealing effects of ZnO/SiOx core-shell nanowire optical properties, in terms of Zn2SiO4 crystallite generation. At 700 A degrees C, the integrated PL intensity of deep-level emission was increased by annealing. With regard to UV emission, free exciton (FX) peak intensity was reduced and the ratio of FX to non-FX peak intensities increased as annealing temperature was increased. These annealing induced changes, including the enhancement of deep-level emission and suppression of FX emission, are mainly related to the generation of Zn2SiO4 crystallites. Transmission electron microscopy revealed that Zn2SiO4 crystallites were formed inside the SiOx shell layer.
URI
http://link.springer.com/article/10.1007%2Fs12540-012-4021-zhttp://hdl.handle.net/20.500.11754/41296
ISSN
1598-9623
DOI
10.1007/s12540-012-4021-z
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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