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Influence of N-doping on the structural and photoluminescence properties of graphene oxide films

Title
Influence of N-doping on the structural and photoluminescence properties of graphene oxide films
Author
심광보
Keywords
NITROGEN-DOPED GRAPHENE; CARBON NANOTUBES; GRAPHITE OXIDE; PHYSICAL-PROPERTIES; OXYGEN REDUCTION; THIN-FILMS; GROWTH; DISPERSIONS; DEPOSITION; SHEETS
Issue Date
2012-09
Publisher
Elsevier Science B.V., Amsterdam
Citation
Carbon,Vol.50,No.10 [2012],p3799-3806
Abstract
Nitrogen (N) was doped into graphene oxide (GO) films at temperatures of 600-900 degrees C under the flow of a mixture of NH3 and Ar. The N (atomic) concentration was varied in the range of 3.63-7.45%. XPS and FTIR spectra show that there are mainly single C-N and double C=N bonds in the GO sheet. Raman spectra indicate that the G band becomes closer to the position of the G band of graphite with increasing doping temperature, and thus reveal that N doping produces a blue-shift of the G-band. In room-temperature photoluminescence (PL) spectra, N-doping produces an increase not only in the overall PL intensity, but also in the wavelength of the peak maxima. The shift of the induced PL of N-doped graphene is attributed mainly to the increased number of graphitic (or quaternary) N. (c) 2012 Elsevier Ltd. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0008622312003193?via%3Dihub
ISSN
0008-6223
DOI
10.1016/j.carbon.2012.04.005
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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