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Memory mechanisms of nonvolatile organic bistable devices based on colloidal CuInS(2)/ZnS core-shell quantum dot - Poly(N-vinylcarbazole) nanocomposites

Title
Memory mechanisms of nonvolatile organic bistable devices based on colloidal CuInS(2)/ZnS core-shell quantum dot - Poly(N-vinylcarbazole) nanocomposites
Other Titles
ZnS core-shell quantum dot - Poly(N-vinylcarbazole) nanocomposites
Author
김태환
Keywords
CuInS2/ZnS core-shell quantum dots; Organic bistable devices; Poly(N-vinylcarbazole)
Issue Date
2011-09
Publisher
Elsevier B.V.
Citation
Organic Electronics, Vol.12, No.9 [2011], p1566-1570
Abstract
Organic bistable devices (OBDs) fabricated utilizing CuInS2 (CIS)/ZnS core?shell-type quantum dots (QDs) blended with a poly(N-vinylcarbazole) (PVK) layer were fabricated on polyethylene terephthalate (PET) substrates by using a spin-coating technique. Transmission electron microscopy images revealed that the CIS/ZnS QDs were distributed over the surface of the PVK layer. Current?voltage (I?V) curves for the Al/PVK+[CIS/ZnS QDs]/ITO/PET devices at 300K showed that the maximum ON/OFF ratio of the current bistability for the OBDs was as large as 3.9×104. Memory mechanisms for the OBDs fabricated on PET substrates are described on the basis of the I?V results.
URI
https://www.sciencedirect.com/science/article/pii/S1566119911001984?via%3Dihub
ISSN
1566-1199
DOI
10.1016/j.orgel.2011.05.023
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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