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High T-g cyclic olefin copolymer/Al2O3 bilayer gate dielectrics for flexible organic complementary circuits with low-voltage and air-stable operation

Title
High T-g cyclic olefin copolymer/Al2O3 bilayer gate dielectrics for flexible organic complementary circuits with low-voltage and air-stable operation
Other Titles
Al2O3 bilayer gate dielectrics for flexible organic complementary circuits with low-voltage and air-stable operation
Author
장재영
Keywords
FIELD-EFFECT TRANSISTORS; LARGE-AREA; ELECTRONICS; STABILITY
Issue Date
2011-09
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY, Vol.21, No.33 [2011], p12542-12546
Abstract
Here we present solution-processed ultrathin cyclic olefin copolymer (COC)/Al2O3 bilayer gate dielectrics for low-voltage and flexible N, N'-ditridecyl perylene diimide (PTCDI-C13)-based n-type organic field-effect transistors (OFETs) and their complementary circuits. The PTCDI-C13 thin films grown on the COC/Al2O3 bilayer gate dielectrics formed large and flat grains with thermal treatment, resulting in high OFET performance, and stability in an ambient air atmosphere. Despite the high glass transition temperature of the COC, the COC thin films showed good mechanical flexibility with the application of bending strain, and OFETs with bilayer gate dielectrics showed stable operation up to a strain of 1.0%. Complementary inverters based on the PTCDI-C13 and pentacene OFETs with bilayer dielectrics functioned at a low voltage of 5 V, and exhibited a high gain of 63.
URI
http://pubs.rsc.org/en/Content/ArticleLanding/2011/JM/c1jm11544h#!divAbstract
ISSN
0959-9428
DOI
10.1039/c1jm11544h
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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