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The influence of visible light on the gate bias instability of In-Ga-Zn-O thin film transistors

Title
The influence of visible light on the gate bias instability of In-Ga-Zn-O thin film transistors
Author
박진성
Keywords
InGaZnO; Thin film transistor; Photon irradiation; Bias instability
Issue Date
2011-05
Publisher
PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND
Citation
Solid State Electronics 2011, 62(1),77-81
Abstract
We investigated the effect of photon irradiation with various energies on the gate bias instability of indium-gallium-zinc oxide transistors. The illumination of red and green light on the transistor caused positive threshold voltage (V-th) shifts of 0.23 V and 0.18 V. respectively, while it did not affect the V-th value in blue light after a positive bias stress. However, the stability of transistors was deteriorated with increasing photon energy after a negative bias stress: negative V-th shifts for red (-0.23 V) and blue light (-3.7 V). This difference can be explained by the compensation effect of the electron carrier trapping and the creation of meta-stable donors via photon excitation. (C) 2011 Elsevier Ltd. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0038110111001481?via%3Dihub
ISSN
0038-1101
DOI
10.1016/j.sse.2011.04.014
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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