Bidirectional Two-Terminal Switching Device Using Schottky Barrier for Spin-Transfer-Torque Magnetic Random Access Memory
- Title
- Bidirectional Two-Terminal Switching Device Using Schottky Barrier for Spin-Transfer-Torque Magnetic Random Access Memory
- Author
- 송윤흡
- Keywords
- TUNNEL-JUNCTIONS; PERPENDICULAR-ANISOTROPY; VOLTAGE-DEPENDENCE; DIODES
- Issue Date
- 2012-09
- Publisher
- IOP Publishing LTD
- Citation
- Japanese Journal of Applied Physics, Oct 2012, 51(10), 106501
- Abstract
- We present a bidirectional two-terminal switching device using a Schottky barrier for spin-transfer-torque magnetic random access memory (STT-MRAM), which is composed of a Schottky barrier contact with a metal/semiconductor/metal (M/S/M) structure. The proposed M/S/M switching device provides a bidirectional current flow sufficient to write STT-MRAM using a punch through with an extended depletion region at a junction under a reverse bias of M/S or S/M. In addition, a high on-off ratio of 105 is confirmed under the read condition, which is acceptable for the operation of STT-MRAM. From this work, it is expected that an M/S/M structure with bilateral Schottky junctions will be a promising switch device for STT-MRAM beyond 20 nm. (C) 2012 The Japan Society of Applied Physics
- URI
- http://iopscience.iop.org/article/10.1143/JJAP.51.106501/meta
- ISSN
- 0021-4922; 1347-4065
- DOI
- 10.1143/JJAP.51.106501
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML