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Effect of Slurry pH and H2O2 on Polycrystalline Ge2Sb2Te5 CMP Performance

Title
Effect of Slurry pH and H2O2 on Polycrystalline Ge2Sb2Te5 CMP Performance
Author
박재근
Keywords
FILM
Issue Date
2012-09
Publisher
Electrochemical SOC INC
Citation
Journal of The Electrochemical Society, 2012, 159(11), P.C546-C551
Abstract
How pH and hydrogen peroxide (H2O2) in colloidal silica-based slurry affect chemical mechanical planarization of polycrystalline Ge2Sb2Te5 (pc-GST) film has been investigated. The polishing rate of pc-GST film increased when the slurry pH decreased or increased from neutral pH. In addition, pc-GST polishing rate was highly affected by adding H2O2, resulting in a high pc-GST polishing rate in the entire pH ranging from 2 to 11. However, a noticeable difference in surface roughness of pc-GST film polished was observed between acidic (pH 2) and alkaline (pH 11) regions. Low RMS of roughness as well as a high polishing rate of pc-GST film was obtained in the acidic pH region with 1wt% H2O2. In contrast, in the alkaline region a high RMS of roughness of pc-GST film was observed owing to enhanced selective corrosion between Ge, Sb, and Te elements. To investigate the different polishing behavior of pc-GST film between acidic and alkaline pH regions, surface characteristics of pc-GST film dipped in acidic or alkaline media were observed by scanning electron microscopy, X-ray photoelectron microscopy, and potentiodynamic measurement.
URI
http://jes.ecsdl.org/content/159/11/C546
ISSN
0013-4651
DOI
10.1149/2.025212jes
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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