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Memory effects and carrier transport mechanisms of write-once-read-many-times memory devices fabricated using poly(3-hexylthiophene) molecules embedded in a polymethylmethacrylate layer on a flexible substrate

Title
Memory effects and carrier transport mechanisms of write-once-read-many-times memory devices fabricated using poly(3-hexylthiophene) molecules embedded in a polymethylmethacrylate layer on a flexible substrate
Author
김태환
Keywords
Current voltage curve; Flexible substrate; Memory effects; On/off ratio; Poly-3-hexylthiophene; Polymer layers; Retention time; Transport mechanism; Write once
Issue Date
2011-05
Publisher
AMERICAN INSTITUTE OF PHYSICS
Citation
Applied Physics Letters. (Applied Physics Letters 9 May 2011, 98(19),193301
Abstract
The memory effects and the carrier transport mechanisms of write-once-read-many-times (WORM) memory devices fabricated using poly(3-hexylthiophene) (P3HT) molecules embedded in a polymethylmethacrylate (PMMA) polymer layer on a flexible substrate were investigated. Current-voltage (I-V) curves at 300 K for Al/P3HT:PMMA/indium-tin-oxide WORM device showed a permanent memory behavior with an ON/OFF ratio of 104. The estimated retention time of the ON state of the WORM device was more than 10 years. The carrier transport mechanisms of the WORM memory devices are described using several models to fit the experimental I-V data. ⓒ 2011 American Institute of Physics.
URI
http://aip.scitation.org/doi/10.1063/1.3588231
ISSN
0003-6951
DOI
10.1063/1.3588231
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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