Memory effects and carrier transport mechanisms of write-once-read-many-times memory devices fabricated using poly(3-hexylthiophene) molecules embedded in a polymethylmethacrylate layer on a flexible substrate
- Title
- Memory effects and carrier transport mechanisms of write-once-read-many-times memory devices fabricated using poly(3-hexylthiophene) molecules embedded in a polymethylmethacrylate layer on a flexible substrate
- Author
- 김태환
- Keywords
- Current voltage curve; Flexible substrate; Memory effects; On/off ratio; Poly-3-hexylthiophene; Polymer layers; Retention time; Transport mechanism; Write once
- Issue Date
- 2011-05
- Publisher
- AMERICAN INSTITUTE OF PHYSICS
- Citation
- Applied Physics Letters. (Applied Physics Letters 9 May 2011, 98(19),193301
- Abstract
- The memory effects and the carrier transport mechanisms of write-once-read-many-times (WORM) memory devices fabricated using poly(3-hexylthiophene) (P3HT) molecules embedded in a polymethylmethacrylate (PMMA) polymer layer on a flexible substrate were investigated. Current-voltage (I-V) curves at 300 K for Al/P3HT:PMMA/indium-tin-oxide WORM device showed a permanent memory behavior with an ON/OFF ratio of 104. The estimated retention time of the ON state of the WORM device was more than 10 years. The carrier transport mechanisms of the WORM memory devices are described using several models to fit the experimental I-V data. ⓒ 2011 American Institute of Physics.
- URI
- http://aip.scitation.org/doi/10.1063/1.3588231
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3588231
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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