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Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory

Title
Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory
Author
박재근
Keywords
Memory; Nanocrystal; Nonvolatile; Polymer
Issue Date
2011-05
Publisher
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, KIKAI-SHINKO-KAIKAN BLDG, 3-5-8, SHIBA-KOEN, MINATO-KU, TOKYO, 105-0011, JAPAN
Citation
IEICE TRANSACTIONS ON ELECTRONICS, E94C(5),850-853
Abstract
In summary, we successfully developed the polymer nonvolatile 4F(2) memory-cell. It was based on nonvolatile memory characteristics such as memory margin and retention time, which was observed in memory-cell embedded with Ag nanocrystals in PVK layer. The nonvolatile memory characteristics depend on the shape, distribution and isolation of Ag nanocrystals. Accordingly, the thickness of Ag film has an important role in optimizing the Ag nanocrystals. Therefore, the polymer nonvolatile memory-cell is fabricated by appropriate thickness of film and need an improvement of interface between Ag nanocrystals and PVK for sufficient nonvolatile memory characteristics.
URI
http://www.jstage.jst.go.jp/article/transele/E94.C/5/E94.C_5_850/_article
ISSN
0916-8524
DOI
10.1587/transele.E94.C.850
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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