Dynamics of Threshold Voltage Instability in IGZO TFTs: Impact of High Pressurized Oxygen Treatment on the Activation Energy Barrier
- Title
- Dynamics of Threshold Voltage Instability in IGZO TFTs: Impact of High Pressurized Oxygen Treatment on the Activation Energy Barrier
- Author
- 정재경
- Keywords
- Amorphous indium-gallium-zinc-oxide (a-IGZO); instability; interstitial oxygen; oxygen vacancy; TFT
- Issue Date
- 2016-03
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 63, NO 3, Page. 1054-1058
- Abstract
- The effect of oxygen high pressurized treatment (OHPT) on the gate-bias thermal stress (BTS) instability of amorphous indium-gallium-zinc-oxide (IGZO) TFTs was investigated. OHPT at 10 atm and 300 degrees C produces TFTs with better reliability under the positive/negative BTS conditions, which can be attributed to the reduction in the oxygen vacancy defect. However, OHPT at a higher pressure (15 atm) deteriorated the BTS-induced stability of the IGZO TFTs. The rationale for this strong OHPT dependence on the BTS instability of IGZO TFTs was discussed based on the single-frame oxygen-related defect model.
- URI
- http://ieeexplore.ieee.org/document/7399747/http://hdl.handle.net/20.500.11754/40826
- ISSN
- 0018-9383; 1557-9646
- DOI
- 10.1109/TED.2015.2511883
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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