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Carrier Transport in Volatile Memory Device with SnO(2) Quantum Dots Embedded in a Polyimide Layer

Title
Carrier Transport in Volatile Memory Device with SnO(2) Quantum Dots Embedded in a Polyimide Layer
Author
김태환
Keywords
RANDOM ACCESS MEMORY; SILICON; DEPOSITION; OXIDE
Issue Date
2011-09
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, Vol.50, No.9 [2011], p
Abstract
Carrier transport in a volatile memory device utilizing self-assembled tin dioxide quantum dots (SnO2 QDs) embedded in a polyimide (PI) layer was investigated. Current-voltage (I-V) curves showed that the Ag/PI/SnO2 QDs/PI/indium-tin-oxide (ITO) device memory device had the ability to write, read, and refresh the electric states under various bias voltages. The capacitance-voltage (C-V) curve for Ag/PI/SnO2 QDs/PI/ p-Si capacitor exhibited a counterclockwise hysteresis, indicative of the existence of sites occupied by carriers. The origin of the volatile memory effect was attributed to holes trapping in the shallow traps formed between QD and PI matrix, which determines the carrier transport characteristics in the hybrid memory device. (C) 2011 The Japan Society of Applied Physics
URI
http://iopscience.iop.org/article/10.1143/JJAP.50.095003/meta
ISSN
0021-4922
DOI
10.1143/JJAP.50.095003
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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