Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2018-02-23T05:01:22Z | - |
dc.date.available | 2018-02-23T05:01:22Z | - |
dc.date.issued | 2012-07 | - |
dc.identifier.citation | NANOTECHNOLOGY; AUG 17 2012, 23, 32, 7p. | en_US |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.1088/0957-4484/23/32/325401/meta | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/40399 | - |
dc.description.abstract | In the current study, we fabricated polymer (poly(3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl-C-61 butyric-acid methyl-ester (PCBM) blend) photovoltaic (PV) cells embedded with p-type single walled carbon nanotubes (SWCNTs) with tangled hair morphology. The power conversion efficiency (PCE) rapidly increased with SWCNT concentration of up to 6.83% coverage, and then decreased and saturated with increasing SWCNT concentration; i.e., the PCE peaks at 5.379%. This tendency is mainly associated with hole transport efficiency toward the transparent electrode (indium-tin-oxide (ITO)) via SWCNTs, directly determining the series resistance and shunt resistance of the polymer PV cells embedded with SWCNTs: the PV cell is increasing shunt resistance and decreasing series resistance. | en_US |
dc.description.sponsorship | This work was supported by the Brain Korea 21 project in 2012 and by the Industrial Strategic Technology Development Program funded by the Ministry of Knowledge Economy (MKE, Korea). | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND | en_US |
dc.subject | POWER CONVERSION EFFICIENCY | en_US |
dc.subject | CHARGE-TRANSPORT PROPERTIES | en_US |
dc.subject | ORGANIC SOLAR-CELLS | en_US |
dc.subject | BULK-HETEROJUNCTION | en_US |
dc.subject | THICKNESS | en_US |
dc.title | Polymer photovoltaic cell embedded with p-type single walled carbon nanotubes fabricated by spray process | en_US |
dc.type | Article | en_US |
dc.relation.no | 32 | - |
dc.relation.volume | 23 | - |
dc.identifier.doi | 10.1088/0957-4484/23/32/325401 | - |
dc.relation.page | - | - |
dc.relation.journal | NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Kim, Dal-Ho | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2012206915 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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