83 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author김태환-
dc.date.accessioned2018-02-22T13:15:15Z-
dc.date.available2018-02-22T13:15:15Z-
dc.date.issued2012-06-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, 51, 6, 06FE21en_US
dc.identifier.issn0021-4922-
dc.identifier.urihttp://iopscience.iop.org/article/10.1143/JJAP.51.06FE21/meta-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/40173-
dc.description.abstractCarrier transport mechanisms of the programming and retention characteristics for TaN-Al2O3-Si3N4-SiO2-Si (TANOS) flash memory devices were theoretically investigated by using the one-band model taking into account Shockley-Reed statistics, the continuity equation, and the Poisson equation. The simulation results showed that the dominant tunneling mechanism during the programming operation in the TANOS memory devices was varied from the Fowler-Nordheim (FN) tunneling to the direct tunneling (DT) processes and from the DT to the modified FN tunneling processes. The dominant tunneling mechanism in TANOS memory devices at the retention operation mode without gate bias voltage was DT process. Simulation results showed that the retention time increased with increasing tunneling oxide thickness. The threshold voltage shifts, as determined from the theoretical calculation during the programming and retention process, were in reasonable agreement with the threshold voltage shifts obtained from experimental results. (C) 2012 The Japan Society of Applied Physicsen_US
dc.description.sponsorshipThis work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2010-0018877). This work was also partially supported by Hynix Semiconductor Inc.en_US
dc.language.isoenen_US
dc.publisherIOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLANDen_US
dc.titleCarrier Transport Mechanisms of the Programming and Retention Characteristics for TaN-Al2O3-Si3N4-SiO2-Si Flash Memory Devicesen_US
dc.typeArticleen_US
dc.relation.no6-
dc.relation.volume51-
dc.identifier.doi10.1143/JJAP.51.06FE21-
dc.relation.page06FE21-1-06FE21-5-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.contributor.googleauthorKim, Dong Hun-
dc.contributor.googleauthorYou, Joo Hyung-
dc.contributor.googleauthorLee, Dea Uk-
dc.contributor.googleauthorKim, Tae Whan-
dc.contributor.googleauthorLee, Keun Woo-
dc.relation.code2012217131-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidtwk-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE