Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2018-02-22T13:13:30Z | - |
dc.date.available | 2018-02-22T13:13:30Z | - |
dc.date.issued | 2012-06 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, 51, 6, 06FE13 | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.1143/JJAP.51.06FE13/meta | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/40171 | - |
dc.description.abstract | WSi2 nanocrystal nanofloating gate capacitors with multistacked Si3N4/HfAlO high-k tunnel layers were fabricated and their electrical properties were characterized. The thicknesses of the Si3N4 and HfAlO tunnel layers were 1.5 and 3 nm, respectively. The asymmetrical Si3N4/HfAlO tunnel layer was modulated to enhance the tunneling efficiency to improve program and erase speeds. The flat-band voltage shift of the WSi2 nanofloating gate capacitor was about 7.2 V after applied voltages swept were from -10 to 10 V and from 10 to -10 V. Then, the program/erase speeds and the memory window under programming and erasing at +/- 7 V were 300 mu s and 1 V, respectively. As demonstrated in the results, the WSi2 nanocrystal memory with barrier-engineered Si3N4/HfAlO layers could be applied to enhance the program and erase speeds at low operating voltages for nanocrystal nonvolatile memory application. (C) 2012 The Japan Society of Applied Physics | en_US |
dc.description.sponsorship | This study was supported by the Mid-career Researcher Program and the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology(Grant Nos. 2011-0018033 and 2011-0012006). | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND | en_US |
dc.title | Speed Enhancement of WSi2 Nanocrystal Memory with Barrier-Engineered Si3N4/HfAlO Tunnel Layer | en_US |
dc.title.alternative | HfAlO Tunnel Layer | en_US |
dc.type | Article | en_US |
dc.relation.volume | 51 | - |
dc.identifier.doi | 10.1143/JJAP.51.06FE13 | - |
dc.relation.page | 1-1 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Lee, Dong Uk | - |
dc.contributor.googleauthor | Kim, Eun Kyu | - |
dc.contributor.googleauthor | Lee, Hyo Jun | - |
dc.contributor.googleauthor | You, Hee-Wook | - |
dc.contributor.googleauthor | Cho, Won-Ju | - |
dc.relation.code | 2012217131 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
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