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Molecular orbital ordering in titania and the associated semiconducting behavior

Title
Molecular orbital ordering in titania and the associated semiconducting behavior
Author
박진성
Keywords
annealing; crystallisation; grain boundaries; grain size; molecular electronic states; semiconductor growth; semiconductor materials; semiconductor thin films; sputter deposition; thin film transistors; titanium compounds; X-ray absorption spectra; X-ray diffraction
Issue Date
2011-10
Publisher
AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Citation
APPLIED PHYSICS LETTERS, 권: 99, 호: 14
Abstract
RF-sputtered TiOx layers were thermally treated and the associated thin-film transistor properties were studied. X-ray diffraction and x-ray absorption spectroscopy analyses indicate that as-grown amorphous TiOx films crystallize to anatase at temperatures above 450 degrees C in air. Thin-film transistors incorporating anatase active layers exhibit n-type behavior, with field effect mobility values near 0.11 cm(2)/Vs when annealed at 550 degrees C. Such a phenomenon is suggested to originate from the ordering of Ti 3d orbitals upon crystallization, and the mobility enhancement at higher annealing temperatures may be attributed to the reduced grain boundary scattering of carriers by virtue of enlarged average grain size. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3646105]
URI
http://aip.scitation.org/doi/10.1063/1.3646105
ISSN
0003-6951
DOI
10.1063/1.3646105
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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