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dc.contributor.author이성재-
dc.date.accessioned2018-02-22T07:28:10Z-
dc.date.available2018-02-22T07:28:10Z-
dc.date.issued2011-10-
dc.identifier.citationIEEE transactions on magnetics, Vol.47 No.10 [2011], 2515-2518en_US
dc.identifier.issn0018-9464-
dc.identifier.issn1941-0069-
dc.identifier.urihttp://ieeexplore.ieee.org/document/6027998/-
dc.description.abstractIn this work, we report the results of our study on the magnetization-reversal properties in a bilayered magnetic antidot lattice (BMAL) system consisting of upper perforated thick Co layer of 40 nm and lower continuous thin Ni layer of 5 nm, probed by using a super-conducting-quantum-interference-device (SQUID) magnetometer and by magnetic-force microscopy (MFM). Such a BMAL structure was fabricated by using photolithography and controlled wet-etching processes. A systematic study on the in-plane anisotropy, and the switching-field properties was carried out. The atomic-force-microscopy (AFM) image clearly indicated that the anti-dot array structures are well defined, and the local element composition was confirmed by using the energy dispersive spectra (EDS). The room-temperature hysteresis curves, taken along different directions of the applied magnetic-field, were proved to be useful to understand the magnetic anisotropy in the sample. A kind of uniaxial anisotropy with easy axis along 0 degrees and hard axis along 90 degrees of applied field direction was observed. To get a comprehensive knowledge about the domain configuration, we performed the MFM imaging along the easy and hard axis of the lattice. The MFM images revealed well-defined periodic domain networks which can be ascribed to the anisotropies such as magnetic uniaxial anisotropy, configurational anisotropy, etc. The observed changes in the magnetic properties are closely related to the patterning that pins the domains as well as to the magneto-anisotropic BMAL structure.en_US
dc.language.isoenen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USAen_US
dc.subjectMagnetic arrayen_US
dc.subjectmagnetic-domain reversalen_US
dc.subjectmagnetic-force microscopyen_US
dc.subjectmagneto-optical kerr effectsen_US
dc.titleComprehensive Studies on the Magnetic Reversal Properties of Bilayered Magnetic Anti-Dot Latticesen_US
dc.typeArticleen_US
dc.relation.no10-
dc.relation.volume47-
dc.identifier.doi10.1109/TMAG.2011.2155038-
dc.relation.page2515-2518-
dc.relation.journalIEEE TRANSACTIONS ON MAGNETICS-
dc.contributor.googleauthorDeshpande, NG-
dc.contributor.googleauthorSeo, M.S.-
dc.contributor.googleauthorKim, J.M.-
dc.contributor.googleauthorRhee, J.Y.-
dc.contributor.googleauthorKim, K.W.-
dc.contributor.googleauthorLee, Y.P-
dc.contributor.googleauthorLee, S.J.-
dc.relation.code2011203879-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF NATURAL SCIENCES[S]-
dc.sector.departmentDEPARTMENT OF PHYSICS-
dc.identifier.pidleesj-
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COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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