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Resistive switching effect for ZnO hybrid memory with metal-oxide nanocrystals

Title
Resistive switching effect for ZnO hybrid memory with metal-oxide nanocrystals
Author
김영호
Keywords
Nano-crystals; Hybrid; SnO2; Nonvolatile memory; Resistance random access memory; Polyimide
Issue Date
2012-10
Publisher
ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
Citation
THIN SOLID FILMS, Vol.521, No.- [2012], p98-101
Abstract
ZnO memory device with SnO2 nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine polyimide layer was fabricated, and its electrical properties were evaluated. The complementary resistive switching effects with a current bistability appeared during voltage sweeping in the range of +/- 4 V and +/- 5 V, respectively. This switching effect of current-voltage may be originated from a resistance fluctuation due to the charge trapping into SnO2 nanocrystals. In the bipolar resistance switching behavior, the ratio of high-resistance state (HRS) and low-resistance state (LRS) currents was about 4.4 x 10(4) at 1 V. The data retention of LRS/HRS currents was maintained about 2.2 x 10(3) after 10(3) s. (C) 2012 Elsevier B.V. All rights reserved.
URI
http://apps.webofknowledge.com/InboundService.do?mode=FullRecord&customersID=LinksAMR&IsProductCode=Yes&product=WOS&Init=Yes&Func=Frame&DestFail=http%3A%2F%2Fwww.webofknowledge.com&action=retrieve&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&SID=D2rz4dyQfMfnsn21tI5&UT=WOS%3A000309905900023http://hdl.handle.net/20.500.11754/39550
ISSN
0040-6090
DOI
10.1016/j.tsf.2012.02.044
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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