Resistive switching effect for ZnO hybrid memory with metal-oxide nanocrystals
- Title
- Resistive switching effect for ZnO hybrid memory with metal-oxide nanocrystals
- Author
- 김은규
- Keywords
- Nano-crystals; Hybrid; SnO2; Nonvolatile memory; Resistance random access memory; Polyimide
- Issue Date
- 2012-10
- Publisher
- ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
- Citation
- THIN SOLID FILMS, Vol.521, No.- [2012], p98-101
- Abstract
- ZnO memory device with SnO2 nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine polyimide layer was fabricated, and its electrical properties were evaluated. The complementary resistive switching effects with a current bistability appeared during voltage sweeping in the range of +/- 4 V and +/- 5 V, respectively. This switching effect of current-voltage may be originated from a resistance fluctuation due to the charge trapping into SnO2 nanocrystals. In the bipolar resistance switching behavior, the ratio of high-resistance state (HRS) and low-resistance state (LRS) currents was about 4.4 x 10(4) at 1 V. The data retention of LRS/HRS currents was maintained about 2.2 x 10(3) after 10(3) s. (C) 2012 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S0040609012001769?via%3Dihub
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2012.02.044
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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