Plasma-enhanced atomic layer deposition of Cu-Mn films with formation of a MnSixOy barrier layer
- Title
- Plasma-enhanced atomic layer deposition of Cu-Mn films with formation of a MnSixOy barrier layer
- Author
- 박종완
- Keywords
- Cu seed layer; Atomic layer deposition; Self-forming barrier; Cu interconnect; Manganese silicate
- Issue Date
- 2012-10
- Publisher
- ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
- Citation
- Thin Solid Films, Vol.521, No.- [2012], p146-149
- Abstract
- Conformal Cu-Mn seed layers were deposited by plasma enhanced atomic layer deposition (PEALD) at low temperature (120 degrees C), and the Mn content in the Cu-Mn alloys were controlled form 0 to approximately 10 atomic percent with various Mn precursor feeding times. Resistivity of the Cu-Mn alloy films decreased by annealing due to out-diffusion of Mn atoms. Out-diffused Mn atoms were segregated to the surface of the film and interface between a Cu-Mn alloy and SiO2, resulting in self-formed MnOx and MnSixOy, respectively. The adhesion between Cu and SiO2 was enhanced by the formation of MnSixOy. Continuous and conductive Cu-Mn seed layers were deposited with PEALD into 24 nm SiO2 trench, enabling a low temperature process, and the trench was perfectly filled using electrochemical plating under conventional conditions. (C) 2012 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S0040609012001320?via%3Dihubhttp://hdl.handle.net/20.500.11754/39519
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2012.02.015
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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