Measurement of internal electric field in GaN-based light-emitting diodes

Title
Measurement of internal electric field in GaN-based light-emitting diodes
Author
신동수
Keywords
Electroreflectance; GaN; light-emitting diodes; modulation spectroscopy; photocurrent; piezoelectric field; polarization; strain
Issue Date
2012-02
Publisher
IEEE
Citation
IEEE Journal of Quantum Electronics, Apr 2012, 48(4), P.500-506
Abstract
The internal electric field due to the piezoelectric effect in an InGaN/GaN multiple quantum-well structure is measured via photoluminescence (PL), electroreflectance (ER), and photocurrent (PC) spectroscopies, and the measurement results are compared with each other and with theoretically calculated values. The flat-band voltage is estimated by measuring the applied bias voltage that induces the maximum in PL peak energy by the quantum-confined Stark effect, 180 phase shift in the ER spectrum, and the smallest band tail state in the PC spectrum. The internal electric fields estimated by the PL, PC, and ER spectra are -1.81, -2.12 +/- 0.14, and -2.04 MV/cm, respectively. The measured piezoelectric fields are in good agreement with theoretically calculated values. Possible factors affecting piezoelectric field measurements are discussed from various perspectives.
URI
http://ieeexplore.ieee.org/document/6145600/?reload=true
ISSN
0018-9197; 1558-1713
DOI
10.1109/JQE.2012.2186610
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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