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Catalyst-Free Metal-Organic Chemical Vapor Deposition Growth of InN Nanorods

Title
Catalyst-Free Metal-Organic Chemical Vapor Deposition Growth of InN Nanorods
Author
박진섭
Keywords
InN Nanorod; Catalyst-Free; Metal-Organic Chemical Vapor Deposition (MOCVD)
Issue Date
2012-04
Publisher
AMER SCIENTIFIC PUBLISHERS, 26650 THE OLD RD, STE 208, VALENCIA, CA 91381-0751 USA
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 12, 2, 1645-1648
Abstract
We demonstrated the successful growth of catalyst-free InN nanorods on (0001) Al2O3 substrates using metal-organic chemical vapor deposition. Morphological evolution was significantly affected by growth temperature. At 710 degrees C, complete InN nanorods with typical diameters of 150 nm and length of similar to 3.5 mu m were grown with hexagonal facets. theta-2 theta X-ray diffraction measurement shows that (0002) InN nanorods grown on (0001) Al2O3 substrates were vertically aligned along c-axis. In addition, high resolution transmission electron microscopy indicates the spacing of the (0001) lattice planes is 0.28 nm, which is very close to that of bulk InN. The electron diffraction patterns also revealed that the InN nanorods are single crystalline with a growth direction along < 0001 > with (10-10) facets.
URI
http://www.ingentaconnect.com/content/asp/jnn/2012/00000012/00000002/art00157http://hdl.handle.net/20.500.11754/37607
ISSN
1533-4880
DOI
10.1166/jnn.2012.4698
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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