Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2018-02-14T02:21:15Z | - |
dc.date.available | 2018-02-14T02:21:15Z | - |
dc.date.issued | 2011-08 | - |
dc.identifier.citation | Synthetic metals, Vol.161 No.17-18 [2011], 1953-1957 | en_US |
dc.identifier.issn | 0379-6779 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0379677911002931?via%3Dihub | - |
dc.description.abstract | A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (GI) and pentacene. Poly(methyl methacrylate) (PMMA) and 2-mercapto 5-nitrobenzimidazole (MNB) layers are deposited on the gate insulator and source/drain gold (S/D, Au) electrode before depositing pentacene to investigate the device properties. The sequence of surface treatment significantly affects the device performance. The ultra-thin PMMA (less than 5nm) was deposited on the organic gate insulator and S/D metal by the spin coating method, which caused no deterioration of the on-state current (Ion), although a bottom contact structure was exploited. The lack of increase in the contact resistance (Rc) may be due to the difference in wettability between PMMA/Au and PMMA/organic GI. As a result, the devices treated with PMMA→MNB showed much better Ion behavior than those fabricated with MNB→PMMA. We report on the difference in the physical and electrical performances associated with the surface treatment sequence. | en_US |
dc.description.sponsorship | Prof. J. S. Park acknowledges funding from the collaborative R&D program with technology advanced country "Development of materials and stacked device structure for next generation solar cells, 2010-advanced-B-105" by the Ministry of Knowledge and Economy. Prof. M. C. Suh gratefully acknowledges to Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education. Science and Technology (Grant No. NRF-2011-0006847). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier Science B.V., Amsterdam. | en_US |
dc.subject | Organic thin film transistor (OTFT) | en_US |
dc.subject | PMMA | en_US |
dc.subject | MNB | en_US |
dc.subject | Contact resistance | en_US |
dc.subject | Sequence of surface treatment | en_US |
dc.subject | Wettability | en_US |
dc.title | The effect of surface treatment of bottom contact organic thin film transistor | en_US |
dc.type | Article | en_US |
dc.relation.no | 17-18 | - |
dc.relation.volume | 161 | - |
dc.identifier.doi | 10.1016/j.synthmet.2011.07.001 | - |
dc.relation.page | 1953-1957 | - |
dc.relation.journal | SYNTHETIC METALS | - |
dc.contributor.googleauthor | Jeon, Woo Sik | - |
dc.contributor.googleauthor | Park, Jung Soo | - |
dc.contributor.googleauthor | Kwon, Jang Hyuk | - |
dc.contributor.googleauthor | Suh, Min Chul | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2011209031 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.